SI8429DB-T1-E1

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SI8429DB-T1-E1

Manufacturer part number:SI8429DB-T1-E1

Manufacturer:Vishay Siliconix

Description:Single P-Channel 8 V 35 mOhms Surface Mount Power Mosfet - MICRO-FOOT

Case Package:SOT-23

Datasheet:SI8429DB-T1-E1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	33 Weeks
Contact Plating	Copper, Silver, Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-XFBGA, CSPBGA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	35mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	2.77W Ta 6.25W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.77W
Turn On Delay Time	12 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	35m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1640pF @ 4V
Current - Continuous Drain (Id) @ 25°C	11.7A Tc
Gate Charge (Qg) (Max) @ Vgs	26nC @ 5V
Rise Time	25ns
Drain to Source Voltage (Vdss)	8V
Drive Voltage (Max Rds On,Min Rds On)	1.2V 4.5V
Vgs (Max)	±5V
Fall Time (Typ)	155 ns
Turn-Off Delay Time	260 ns
Continuous Drain Current (ID)	-10.2A
Threshold Voltage	-600mV
Gate to Source Voltage (Vgs)	5V
Drain Current-Max (Abs) (ID)	7.8A
Drain to Source Breakdown Voltage	-8V
Pulsed Drain Current-Max (IDM)	25A
Height	360μm
Length	1.6mm
Width	1.6mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free