SIA425EDJ-T1-GE3

new-10%

Manufacturer part number:SIA425EDJ-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 4.5A SC-70-6

Case Package:SOT-23

Datasheet:SIA425EDJ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	TrenchFET®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation-Max	2.9W Ta 15.6W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.9W
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	60m Ω @ 4.2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Current - Continuous Drain (Id) @ 25°C	4.5A Tc
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	10 ns
Continuous Drain Current (ID)	4.5A
Gate to Source Voltage (Vgs)	12V
DS Breakdown Voltage-Min	20V
Height	750μm
Length	2.05mm
Width	2.05mm
RoHS Status	ROHS3 Compliant