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SIA443DJ-T1-E3

SIA443DJ-T1-E3

SIA443DJ-T1-E3

Vishay Siliconix

MOSFET 20V 9.0A 15W 45mohm @ 4.5V

SOT-23

SIA443DJ-T1-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6
Supplier Device Package PowerPAK® SC-70-6 Single
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 45mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 3.3W Ta 15W Tc
Element Configuration Single
Turn On Delay Time 5 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 45mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 10V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 8V
Rise Time 15ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 75 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 9A
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Input Capacitance 750pF
Drain to Source Resistance 45mOhm
Rds On Max 45 mΩ
Height 750μm
Length 2.05mm
Width 2.05mm
RoHS Status ROHS3 Compliant

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