SIA537EDJ-T1-GE3

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Manufacturer part number:SIA537EDJ-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N/P-CH 12V/20V SC-70-6L

Case Package:SOT-23

Datasheet:SIA537EDJ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Number of Pins	6
Weight	28.009329mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Max Power Dissipation	7.8W
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	SIA537
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	28m Ω @ 5.2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	455pF @ 6V
Gate Charge (Qg) (Max) @ Vgs	16nC @ 8V
Rise Time	15ns
Drain to Source Voltage (Vdss)	12V 20V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	10 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	4.5A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	-20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant