BSZ15DC02KDHXTMA1 Description

Innovative manufacturing techniques enable International Rectifier's Fifth Generation HEXFETs to have exceptionally low on-resistance per silicon area. This characteristic gives the design an extremely efficient and dependable device for use in a variety of applications, in addition to the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for. The SO-8 is the ideal option for a multitude of power applications thanks to its enhanced thermal characteristics and multiple-die capacity. Due to the employment of a specially designed leadframe, this change was made possible. With this invention, multiple devices can be used while substantially less board area is needed. The package is made to work with vapor phase infrared or wave soldering techniques.

BSZ15DC02KDHXTMA1 Features

• P + N complementary channel

• Improvement mode

• Level Super Logic (2.5V rated)

• Common sewer

• Rated Avalanche

• operating temperature of 175 ??C

• According to AEC Q101, qualified

• 100 percent lead-free; compliant with RoHS

BSZ15DC02KDHXTMA1 Applications

Switching applications