IRLU3705ZPBF

new-10%

IRLU3705ZPBF

Manufacturer part number:IRLU3705ZPBF

Manufacturer:Infineon Technologies

Description:IRLU3705ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRLU3705ZPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	8MOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
Current Rating	42A
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Power Dissipation-Max	130W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	130W
Case Connection	DRAIN
Turn On Delay Time	17 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8m Ω @ 42A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	42A Tc
Gate Charge (Qg) (Max) @ Vgs	66nC @ 5V
Rise Time	150ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±16V
Fall Time (Typ)	70 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	42A
Gate to Source Voltage (Vgs)	16V
Drain Current-Max (Abs) (ID)	89A
Drain to Source Breakdown Voltage	55V
Height	6.223mm
Length	6.7056mm
Width	2.3876mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free