SIA906EDJ-T1-GE3

new-10%

Manufacturer part number:SIA906EDJ-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 2N-CH 20V 4.5A SC70-6

Case Package:SOT-23

Datasheet:SIA906EDJ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Number of Pins	6
Weight	28.009329mg
Transistor Element Material	SILICON
Manufacturer Package Identifier	C-07431-DUAL
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	46mOhm
Subcategory	FET General Purpose Power
Max Power Dissipation	7.8W
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
Qualification Status	Not Qualified
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.9W
Case Connection	DRAIN
Turn On Delay Time	5 ns
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	46m Ω @ 3.9A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Rise Time	12ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	12 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	4.5A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Height	850μm
Length	2.05mm
Width	2.05mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free