FDMA1025P

new-10%

Manufacturer part number:FDMA1025P

Manufacturer:ON Semiconductor

Description:MOSFET 2P-CH 20V 3.1A MLP2X2

Case Package:SOT-23

Datasheet:FDMA1025P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-VDFN Exposed Pad
Number of Pins	6
Weight	40mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory	Other Transistors
Voltage - Rated DC	-20V
Max Power Dissipation	700mW
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	-3.1A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.4W
Turn On Delay Time	5 ns
FET Type	2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs	155m Ω @ 3.1A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	450pF @ 10V
Current - Continuous Drain (Id) @ 25°C	3.1A
Gate Charge (Qg) (Max) @ Vgs	4.8nC @ 4.5V
Rise Time	14ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	14 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	-3.1A
Threshold Voltage	-900mV
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-20V
Pulsed Drain Current-Max (IDM)	6A
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
Height	750μm
Length	2mm
Width	2mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free