ZXMP6A18DN8TA

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ZXMP6A18DN8TA

Manufacturer part number:ZXMP6A18DN8TA

Manufacturer:Diodes Incorporated

Description:ZXMP6A18DN8TA datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Diodes Incorporated stock available on our website

Case Package:SOT-23

Datasheet:ZXMP6A18DN8TA Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Weight	73.992255mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Resistance	55mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	-60V
Max Power Dissipation	2.1W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-4.6A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	8
Number of Elements	2
Number of Channels	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.1W
Turn On Delay Time	4.6 ns
Power - Max	1.8W
FET Type	2 P-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	55m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds	1580pF @ 30V
Current - Continuous Drain (Id) @ 25°C	3.7A
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
Rise Time	5.8ns
Drain to Source Voltage (Vdss)	60V
Fall Time (Typ)	23 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	-4.8A
Threshold Voltage	-1V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	3.7A
Drain to Source Breakdown Voltage	-60V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Height	1.7mm
Length	5mm
Width	4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free