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SIA928DJ-T1-GE3

SIA928DJ-T1-GE3

SIA928DJ-T1-GE3

Vishay Siliconix

VISHAY SIA928DJ-T1-GE3 Dual MOSFET, Dual N Channel, 4.5 A, 30 V, 0.02 ohm, 10 V, 2.2 VNew

SOT-23

SIA928DJ-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6 Dual
Number of Pins 6
Manufacturer Package Identifier PowerPAK SC70-6L Dual
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 7.8W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 25m Ω @ 5A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 4.5A
Threshold Voltage 2.2V
FET Feature Standard
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.18772 $0.56316
6,000 $0.17628 $1.05768
15,000 $0.16484 $2.4726
30,000 $0.15683 $4.7049

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