SIB408DK-T1-GE3

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SIB408DK-T1-GE3

Manufacturer part number:SIB408DK-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 30V 7A PPAK SC75-6L

Case Package:SOT-23

Datasheet:SIB408DK-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-75-6L
Number of Pins	6
Weight	95.991485mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
JESD-30 Code	R-PDSO-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	2.4W Ta 13W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.4W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	40m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 15V
Current - Continuous Drain (Id) @ 25°C	7A Tc
Gate Charge (Qg) (Max) @ Vgs	9.5nC @ 10V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	13 ns
Continuous Drain Current (ID)	7A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	6A
Drain-source On Resistance-Max	0.04Ohm
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	20A
Avalanche Energy Rating (Eas)	5 mJ
Height	750μm
Length	1.6mm
Width	1.6mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free