SIB411DK-T1-GE3

new-10%

Manufacturer part number:SIB411DK-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 9A PPAK SC75-6L

Case Package:SOT-23

Datasheet:SIB411DK-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-75-6L
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	66mOhm
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
Frequency	156.25MHz
[email protected] Reflow Temperature-Max (s)	40
Frequency Stability	25 ppm
Pin Count	6
JESD-30 Code	S-XDSO-N3
Number of Elements	1
Power Dissipation-Max	2.4W Ta 13W Tc
Load Capacitance	15pF
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.4W
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	66m Ω @ 3.3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	470pF @ 10V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	15nC @ 8V
Rise Time	40ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	75 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	-9A
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	4.8A
Drain to Source Breakdown Voltage	-20V
Dual Supply Voltage	20V
Nominal Vgs	-1 V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free