SIB415DK-T1-GE3

new-10%

Manufacturer part number:SIB415DK-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 30V 9A SC75-6

Case Package:SOT-23

Datasheet:SIB415DK-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-75-6L
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	SMD/SMT
ECCN Code	EAR99
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	6
JESD-30 Code	S-XDSO-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.4W Ta 13W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.4W
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	87m Ω @ 4.17A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	295pF @ 15V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	10.05nC @ 10V
Rise Time	55ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	-9A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	9A
Drain-source On Resistance-Max	0.087Ohm
Drain to Source Breakdown Voltage	-30V
Dual Supply Voltage	30V
Nominal Vgs	-3 V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant