SIB433EDK-T1-GE3 Overview

Its continuous drain current is -9A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-20V, and this device has a drain-to-source breakdown voltage of -20V voltage.The Drain-to-Source Resistance (DTS) of a MOSFET is 47mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -400mV.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (1.8V 4.5V) to reduce its overall power consumption.

SIB433EDK-T1-GE3 Features

a continuous drain current (ID) of -9A
a drain-to-source breakdown voltage of -20V voltage
single MOSFETs transistor is 47mOhm
a threshold voltage of -400mV
a 20V drain to source voltage (Vdss)

SIB433EDK-T1-GE3 Applications

There are a lot of Vishay Siliconix
SIB433EDK-T1-GE3 applications of single MOSFETs transistors.

• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Lighting, Server, Telecom and UPS.
• DC-to-DC converters