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SIB437EDKT-T1-GE3

SIB437EDKT-T1-GE3

SIB437EDKT-T1-GE3

Vishay Siliconix

VISHAY - SIB437EDKT-T1-GE3 - MOSFET, P CH, ESD, 8V, 9A, PPK SC75

SOT-23

SIB437EDKT-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® TSC-75-6
Number of Pins 6
Weight 95.991485mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Pin Count 6
JESD-30 Code S-PDSO-N3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.4W Ta 13W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.4W
Case Connection DRAIN
Turn On Delay Time 90 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 34m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
Rise Time 170ns
Drain to Source Voltage (Vdss) 8V
Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
Vgs (Max) ±5V
Fall Time (Typ) 630 ns
Turn-Off Delay Time 690 ns
Continuous Drain Current (ID) 7.5A
Threshold Voltage -350mV
Gate to Source Voltage (Vgs) 5V
Drain Current-Max (Abs) (ID) 9A
Drain-source On Resistance-Max 0.034Ohm
Drain to Source Breakdown Voltage -8V
Pulsed Drain Current-Max (IDM) 25A
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.059891 $5.059891
10 $4.773482 $47.73482
100 $4.503285 $450.3285
500 $4.248383 $2124.1915
1000 $4.007908 $4007.908

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