SIB437EDKT-T1-GE3

new-10%

Manufacturer part number:SIB437EDKT-T1-GE3

Manufacturer:Vishay Siliconix

Description:VISHAY - SIB437EDKT-T1-GE3 - MOSFET, P CH, ESD, 8V, 9A, PPK SC75

Case Package:SOT-23

Datasheet:SIB437EDKT-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® TSC-75-6
Number of Pins	6
Weight	95.991485mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Pin Count	6
JESD-30 Code	S-PDSO-N3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.4W Ta 13W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.4W
Case Connection	DRAIN
Turn On Delay Time	90 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	34m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250μA
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	16nC @ 4.5V
Rise Time	170ns
Drain to Source Voltage (Vdss)	8V
Drive Voltage (Max Rds On,Min Rds On)	1.2V 4.5V
Vgs (Max)	±5V
Fall Time (Typ)	630 ns
Turn-Off Delay Time	690 ns
Continuous Drain Current (ID)	7.5A
Threshold Voltage	-350mV
Gate to Source Voltage (Vgs)	5V
Drain Current-Max (Abs) (ID)	9A
Drain-source On Resistance-Max	0.034Ohm
Drain to Source Breakdown Voltage	-8V
Pulsed Drain Current-Max (IDM)	25A
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant