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SIDR390DP-T1-RE3

SIDR390DP-T1-RE3

SIDR390DP-T1-RE3

Vishay Siliconix

N-Channel 30 V (D-S) MOSFET

SOT-23

SIDR390DP-T1-RE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Supplier Device Package PowerPAK® SO-8DC
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET® Gen IV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 6.25W Ta 125W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 0.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 10180pF @ 15V
Current - Continuous Drain (Id) @ 25°C 69.9A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 153nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +20V, -16V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.541801 $2.541801
10 $2.397925 $23.97925
100 $2.262194 $226.2194
500 $2.134145 $1067.0725
1000 $2.013345 $2013.345

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