SIE804DF-T1-GE3

new-10%

Manufacturer part number:SIE804DF-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 150V 37A POLARPAK

Case Package:SOT-23

Datasheet:SIE804DF-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	10-PolarPAK® (LH)
Number of Pins	10
Supplier Device Package	10-PolarPAK® (LH)
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	5.2W Ta 125W Tc
Power Dissipation	5.2W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	38mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3000pF @ 50V
Current - Continuous Drain (Id) @ 25°C	37A Tc
Gate Charge (Qg) (Max) @ Vgs	105nC @ 10V
Drain to Source Voltage (Vdss)	150V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	37A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	150V
Input Capacitance	3nF
Drain to Source Resistance	38mOhm
Rds On Max	38 mΩ
RoHS Status	ROHS3 Compliant