TP65H050WS

new-10%

Manufacturer part number:TP65H050WS

Manufacturer:Transphorm

Description:GANFET N-CH 650V 34A TO247-3

Case Package:SOT-23

Datasheet:TP65H050WS Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Technology	GaNFET (Cascode Gallium Nitride FET)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Power Dissipation-Max	119W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	60m Ω @ 22A, 10V
Vgs(th) (Max) @ Id	4.8V @ 700μA
Input Capacitance (Ciss) (Max) @ Vds	1000pF @ 400V
Current - Continuous Drain (Id) @ 25°C	34A Tc
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	12V
Vgs (Max)	±20V
RoHS Status	RoHS Compliant