SIHB12N50C-E3

new-10%

Manufacturer part number:SIHB12N50C-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 500V 12A D2PAK

Case Package:SOT-23

Datasheet:SIHB12N50C-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	208W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	555m Ω @ 4A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1375pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Rise Time	35ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	23 ns
Continuous Drain Current (ID)	12A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.555Ohm
Pulsed Drain Current-Max (IDM)	28A
DS Breakdown Voltage-Min	500V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant