FQA10N80

new-10%

Manufacturer part number:FQA10N80

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 800V 9.8A TO-3P

Case Package:SOT-23

Datasheet:FQA10N80 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
Series	QFET®
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	240W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.05 Ω @ 4.9A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.8A Tc
Gate Charge (Qg) (Max) @ Vgs	71nC @ 10V
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Drain Current-Max (Abs) (ID)	10A
Drain-source On Resistance-Max	1.1Ohm
Pulsed Drain Current-Max (IDM)	40A
DS Breakdown Voltage-Min	800V
Avalanche Energy Rating (Eas)	920 mJ