SI2318CDS-T1-GE3

new-10%

Manufacturer part number:SI2318CDS-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 40V 5.6A N-CH MOSFET

Case Package:SOT-23

Datasheet:SI2318CDS-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Digi-Reel®
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	42mOhm
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.25W Ta 2.1W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.25W
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	42m Ω @ 4.3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	340pF @ 20V
Current - Continuous Drain (Id) @ 25°C	5.6A Tc
Gate Charge (Qg) (Max) @ Vgs	9nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	14 ns
Continuous Drain Current (ID)	4.3A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	5.6A
Drain to Source Breakdown Voltage	40V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	1.2 V
Height	1.12mm
Length	3.04mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free