SIHB22N60S-GE3

new-10%

Manufacturer part number:SIHB22N60S-GE3

Manufacturer:Vishay Siliconix

Description:Trans MOSFET N-CH 600V 22A 3-Pin(2+Tab) D2PAK

Case Package:SOT-23

Datasheet:SIHB22N60S-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	S
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	250W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	190m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2.81nF @ 25V
Current - Continuous Drain (Id) @ 25°C	22A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Drain Current-Max (Abs) (ID)	22A
Drain-source On Resistance-Max	0.19Ohm
Pulsed Drain Current-Max (IDM)	65A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	690 mJ
RoHS Status	ROHS3 Compliant