SIHF8N50D-E3 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 29 mJ.The maximum input capacitance of this device is 527pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 8.7A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 17 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 13 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 3V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
SIHF8N50D-E3 Features
the avalanche energy rating (Eas) is 29 mJ
a continuous drain current (ID) of 8.7A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 17 ns
a threshold voltage of 3V
SIHF8N50D-E3 Applications
There are a lot of Vishay Siliconix
SIHF8N50D-E3 applications of single MOSFETs transistors.
- Micro Solar Inverter
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- DC/DC converters
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- Power Tools
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- Motor Drives and Uninterruptible Power Supples
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- Synchronous Rectification
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- Battery Protection Circuit
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- Telecom 1 Sever Power Supplies
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- Industrial Power Supplies
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- PFC stages, hard switching PWM stages and resonant switching
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- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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