SIHG32N50D-E3

new-10%

Manufacturer part number:SIHG32N50D-E3

Manufacturer:Vishay Siliconix

Description:MOSFET 500V 32A 390W 150mOhm @ 10V

Case Package:SOT-23

Datasheet:SIHG32N50D-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2015
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	390W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	390W
Case Connection	DRAIN
Turn On Delay Time	27 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	150m Ω @ 16A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2550pF @ 100V
Current - Continuous Drain (Id) @ 25°C	30A Tc
Gate Charge (Qg) (Max) @ Vgs	96nC @ 10V
Rise Time	75ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	55 ns
Turn-Off Delay Time	58 ns
Continuous Drain Current (ID)	30A
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	30V
Pulsed Drain Current-Max (IDM)	89A
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	225 mJ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free