SIHG64N65E-GE3

new-10%

Manufacturer part number:SIHG64N65E-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 650V 64A TO247AC

Case Package:SOT-23

Datasheet:SIHG64N65E-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2015
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	520W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	47m Ω @ 32A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7497pF @ 100V
Current - Continuous Drain (Id) @ 25°C	64A Tc
Gate Charge (Qg) (Max) @ Vgs	369nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
JEDEC-95 Code	TO-247AC
Drain Current-Max (Abs) (ID)	64A
Drain-source On Resistance-Max	0.047Ohm
Pulsed Drain Current-Max (IDM)	202A
DS Breakdown Voltage-Min	650V
Avalanche Energy Rating (Eas)	1800 mJ
RoHS Status	Non-RoHS Compliant