SIHG73N60E-E3

new-10%

Manufacturer part number:SIHG73N60E-E3

Manufacturer:Vishay Siliconix

Description:MOSFET 600 Volts 73 Amps 520 Watts

Case Package:SOT-23

Datasheet:SIHG73N60E-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2016
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	520W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	63 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	39m Ω @ 36A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7700pF @ 100V
Current - Continuous Drain (Id) @ 25°C	73A Tc
Gate Charge (Qg) (Max) @ Vgs	362nC @ 10V
Rise Time	158ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	180 ns
Turn-Off Delay Time	290 ns
Continuous Drain Current (ID)	73A
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	20V
DS Breakdown Voltage-Min	600V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant