SPI21N10

new-10%

Manufacturer part number:SPI21N10

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 21A TO-262

Case Package:SOT-23

Datasheet:SPI21N10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2002
Series	SIPMOS®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	21A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	90W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	90W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	80m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	4V @ 44μA
Input Capacitance (Ciss) (Max) @ Vds	865pF @ 25V
Current - Continuous Drain (Id) @ 25°C	21A Tc
Gate Charge (Qg) (Max) @ Vgs	38.4nC @ 10V
Rise Time	56ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	23 ns
Turn-Off Delay Time	37 ns
Continuous Drain Current (ID)	21A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.08Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	84A
Avalanche Energy Rating (Eas)	130 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free