SIHP14N60E-GE3

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Manufacturer part number:SIHP14N60E-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET (Metal Oxide) N-Channel Tube 309mOhm @ 7A, 10V ±30V 1205pF @ 100V 64nC @ 10V 600V TO-220-3

Case Package:SOT-23

Datasheet:SIHP14N60E-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220AB
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	E
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	147W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	309mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1205pF @ 100V
Current - Continuous Drain (Id) @ 25°C	13A Tc
Gate Charge (Qg) (Max) @ Vgs	64nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$1.974000	$1.974
10	$1.862264	$18.62264
100	$1.756853	$175.6853
500	$1.657408	$828.704
1000	$1.563593	$1563.593

SIHP14N60E-GE3 Overview

A device's maximal input capacitance is 1205pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).