SQ2318AES-T1_GE3

new-10%

Manufacturer part number:SQ2318AES-T1_GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CHAN 40V SOT23

Case Package:SOT-23

Datasheet:SQ2318AES-T1_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	Automotive, AEC-Q101, TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	7.5 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	31m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	555pF @ 10V
Current - Continuous Drain (Id) @ 25°C	8A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Rise Time	8.4ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	5.7 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	8A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	8A
DS Breakdown Voltage-Min	40V
Feedback Cap-Max (Crss)	46 pF
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant