IRFS7730TRLPBF

new-10%

Manufacturer part number:IRFS7730TRLPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 75V 195A D2PAK

Case Package:SOT-23

Datasheet:IRFS7730TRLPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	3.949996g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	HEXFET®, StrongIRFET™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	375W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	21 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.6m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	13660pF @ 25V
Current - Continuous Drain (Id) @ 25°C	195A Tc
Gate Charge (Qg) (Max) @ Vgs	407nC @ 10V
Rise Time	120ns
Drain to Source Voltage (Vdss)	75V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	115 ns
Turn-Off Delay Time	180 ns
Continuous Drain Current (ID)	195A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0026Ohm
Pulsed Drain Current-Max (IDM)	984A
DS Breakdown Voltage-Min	75V
Avalanche Energy Rating (Eas)	898 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free