SIR646DP-T1-GE3

new-10%

Manufacturer part number:SIR646DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 40V [email protected] 10V 60A N-CH T-FET

Case Package:SOT-23

Datasheet:SIR646DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Reach Compliance Code	unknown
Power Dissipation-Max	5W Ta 54W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2230pF @ 20V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	51nC @ 10V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant