IRFSL31N20D

new-10%

Manufacturer part number:IRFSL31N20D

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 200V 31A TO-262

Case Package:SOT-23

Datasheet:IRFSL31N20D Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2000
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Configuration	SINGLE
Power Dissipation-Max	3.1W Ta 200W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	82m Ω @ 18A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2370pF @ 25V
Current - Continuous Drain (Id) @ 25°C	31A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Drain Current-Max (Abs) (ID)	31A
Drain-source On Resistance-Max	0.082Ohm
Pulsed Drain Current-Max (IDM)	124A
DS Breakdown Voltage-Min	200V
Avalanche Energy Rating (Eas)	420 mJ
RoHS Status	Non-RoHS Compliant