SIR662DP-T1-GE3

new-10%

Manufacturer part number:SIR662DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:Trans MOSFET N-CH 60V 35.8A 8-Pin PowerPAK SO T/R

Case Package:SOT-23

Datasheet:SIR662DP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	TrenchFET®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	2.7mOhm
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
JESD-30 Code	R-XDSO-C5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	6.25W Ta 104W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	6.25W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.7m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4365pF @ 30V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	96nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	60A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
DS Breakdown Voltage-Min	60V
Nominal Vgs	1 V
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free