SIS476DN-T1-GE3

new-10%

Manufacturer part number:SIS476DN-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET 30V [email protected] 40A N-Ch G-IV

Case Package:SOT-23

Datasheet:SIS476DN-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8
Number of Pins	8
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2004
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Resistance	2.5mOhm
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	3.7W Ta 52W Tc
Element Configuration	Single
Power Dissipation	3.7W
Turn On Delay Time	24 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3595pF @ 15V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	77nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	+20V, -16V
Fall Time (Typ)	16 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	40A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	30V
Height	1.12mm
Length	3.4mm
Width	3.4mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free