DMN10H700S-7

new-10%

Manufacturer part number:DMN10H700S-7

Manufacturer:Diodes Incorporated

Description:MOSFET N-CHA 100V 700MA SOT23

Case Package:SOT-23

Datasheet:DMN10H700S-7 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	Automotive, AEC-Q101
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	400mW Ta
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	700m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	235pF @ 50V
Current - Continuous Drain (Id) @ 25°C	700mA Ta
Gate Charge (Qg) (Max) @ Vgs	4.6nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	700mA
Drain Current-Max (Abs) (ID)	0.7A
Drain-source On Resistance-Max	0.7Ohm
DS Breakdown Voltage-Min	100V
RoHS Status	ROHS3 Compliant