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SIS488DN-T1-GE3

  • SIS488DN-T1-GE3
  • SIS488DN-T1-GE3

SIS488DN-T1-GE3

SIS488DN-T1-GE3

Vishay Siliconix

N-Channel Tape & Reel (TR) 5.5m Ω @ 20A, 10V ±20V 1330pF @ 20V 32nC @ 10V PowerPAK® 1212-8

SOT-23

SIS488DN-T1-GE3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET®
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 5.5mOhm
Terminal Position DUAL
Terminal Form C BEND
JESD-30 Code S-PDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.7W Ta 52W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 22 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1330pF @ 20V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Rise Time 65ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Avalanche Energy Rating (Eas) 20 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.45920 $1.3776
6,000 $0.43764 $2.62584
15,000 $0.42224 $6.3336
SIS488DN-T1-GE3 Product Details

SIS488DN-T1-GE3 Description


A dual N-channel MOSFET transistor from Vishay Siliconix, the SIS488DN-T1-GE3, is made for a variety of uses, including power management and DC-DC converters. It is ideal for use in high-efficiency power conversion systems due to its low on-resistance, large current capacity, and quick switching rates. Because of its small size and surface-mount packaging, the SIS488DN-T1-GE3 is simple to include into a number of circuit designs. It is a member of Vishay's PowerPAK family of MOSFETs, which are designed for excellent thermal performance and great power density.



SIS488DN-T1-GE3 Features


  • Small footprint

  • RoHS compliant

  • Low gate charge

  • Low on-resistance

  • Fast switching speed

  • High current capacity

  • Low thermal resistance



SIS488DN-T1-GE3 Applications


  • Motor control

  • Power supplies

  • Audio amplifiers

  • Lighting systems

  • Switching circuits

  • DC-DC converters

  • Power management in battery-powered systems


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