STD2N80K5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STD2N80K5 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
17 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Weight
3.949996g
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
SuperMESH5™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Base Part Number
STD2N80
Number of Channels
1
Power Dissipation-Max
45W Tc
Element Configuration
Single
Turn On Delay Time
8 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
4.5 Ω @ 1A, 10V
Vgs(th) (Max) @ Id
5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
95pF @ 100V
Current - Continuous Drain (Id) @ 25°C
2A Tc
Gate Charge (Qg) (Max) @ Vgs
3nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)
10V
Turn-Off Delay Time
19 ns
Continuous Drain Current (ID)
2A
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
800V
Height
2.4mm
Length
6.6mm
Width
6.2mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.507104
$0.507104
10
$0.478400
$4.784
100
$0.451321
$45.1321
500
$0.425774
$212.887
1000
$0.401674
$401.674
STD2N80K5 Product Details
STD2N80K5 Description
STD2N80K5 belongs to the family of N-channel power MOSFETs that are manufactured by STMicroelectronics based on the MDmesh? K5 technology and an innovative proprietary vertical structure. STD10NM65N is able to provide low on-resistance and gate charge for applications where superior power density and high efficiency are required.
STD2N80K5 Features
Low on-resistance
Low gate charge
Verticle structure
MDmesh? K5 technology
Available in the DPAK package
STD2N80K5 Applications
Applications where superior power density and high efficiency are required