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STD2N80K5

STD2N80K5

STD2N80K5

STMicroelectronics

STD2N80K5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STD2N80K5 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 17 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series SuperMESH5™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number STD2N80
Number of Channels 1
Power Dissipation-Max 45W Tc
Element Configuration Single
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.5 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 95pF @ 100V
Current - Continuous Drain (Id) @ 25°C 2A Tc
Gate Charge (Qg) (Max) @ Vgs 3nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 2A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 800V
Height 2.4mm
Length 6.6mm
Width 6.2mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.507104 $0.507104
10 $0.478400 $4.784
100 $0.451321 $45.1321
500 $0.425774 $212.887
1000 $0.401674 $401.674
STD2N80K5 Product Details

STD2N80K5 Description


STD2N80K5 belongs to the family of N-channel power MOSFETs that are manufactured by STMicroelectronics based on the MDmesh? K5 technology and an innovative proprietary vertical structure. STD10NM65N is able to provide low on-resistance and gate charge for applications where superior power density and high efficiency are required.



STD2N80K5 Features


  • Low on-resistance 

  • Low gate charge

  • Verticle structure

  • MDmesh? K5 technology

  • Available in the DPAK package



STD2N80K5 Applications


  • Applications where superior power density and high efficiency are required


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