SIS612EDNT-T1-GE3

new-10%

Manufacturer part number:SIS612EDNT-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-Channel 20V

Case Package:SOT-23

Datasheet:SIS612EDNT-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8S
Supplier Device Package	PowerPAK® 1212-8S (3.3x3.3)
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	3.7W Ta 52W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.9mOhm @ 14A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	2060pF @ 10V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Continuous Drain Current (ID)	50A
Input Capacitance	2.06nF
Rds On Max	3.9 mΩ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free