SISS64DN-T1-GE3 Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 45 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 3420pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 37A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Drain current refers to the maximum continuous current a device can conduct, and it is 40A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

SISS64DN-T1-GE3 Features

the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of 37A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 25 ns

SISS64DN-T1-GE3 Applications

There are a lot of Vishay Siliconix
SISS64DN-T1-GE3 applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies