NTGD3148NT1G

new-10%

Manufacturer part number:NTGD3148NT1G

Manufacturer:ON Semiconductor

Description:MOSFET 2N-CH 20V 3A 6TSOP

Case Package:SOT-23

Datasheet:NTGD3148NT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-50°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Max Power Dissipation	900mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	NTGD3148N
Pin Count	6
Qualification Status	Not Qualified
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.1W
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	70m Ω @ 3.5A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	300pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	3.8nC @ 4.5V
Rise Time	11.2ns
Drain to Source Voltage (Vdss)	20V
Fall Time (Typ)	1.6 ns
Turn-Off Delay Time	12.8 ns
Continuous Drain Current (ID)	3A
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	3A
Drain-source On Resistance-Max	0.07Ohm
Drain to Source Breakdown Voltage	20V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free