SQD40P10-40L_GE3

new-10%

Manufacturer part number:SQD40P10-40L_GE3

Manufacturer:Vishay Siliconix

Description:SQD40P10-40L Series P-Channel 100 V 0.04 Ohms 136 W SMT Power Mosfet - SOT-23-3

Case Package:SOT-23

Datasheet:SQD40P10-40L_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	TO-252AA
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	Automotive, AEC-Q101, TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	136W Tc
Power Dissipation	136W
Turn On Delay Time	11 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	40mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5540pF @ 15V
Current - Continuous Drain (Id) @ 25°C	38A Tc
Gate Charge (Qg) (Max) @ Vgs	144nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	78 ns
Continuous Drain Current (ID)	-38A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-100V
Max Junction Temperature (Tj)	175°C
Drain to Source Resistance	33mOhm
Height	2.507mm
RoHS Status	ROHS3 Compliant