FQP16N25C

new-10%

Manufacturer part number:FQP16N25C

Manufacturer:ON Semiconductor

Description:FQP16N25C datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQP16N25C Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Supplier Device Package	TO-220-3
Weight	1.8g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	250V
Technology	MOSFET (Metal Oxide)
Current Rating	16A
Number of Elements	1
Power Dissipation-Max	139W Tc
Element Configuration	Single
Power Dissipation	139W
Turn On Delay Time	15 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	270mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1080pF @ 25V
Current - Continuous Drain (Id) @ 25°C	15.6A Tc
Gate Charge (Qg) (Max) @ Vgs	53.5nC @ 10V
Rise Time	130ns
Drain to Source Voltage (Vdss)	250V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	105 ns
Turn-Off Delay Time	135 ns
Continuous Drain Current (ID)	15.6A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	250V
Input Capacitance	1.08nF
Drain to Source Resistance	270mOhm
Rds On Max	270 mΩ
Height	9.4mm
Length	10.1mm
Width	4.7mm
RoHS Status	RoHS Compliant
Lead Free	Lead Free