SQD50P06-15L_GE3

new-10%

Manufacturer part number:SQD50P06-15L_GE3

Manufacturer:Vishay Siliconix

Description:Automotive P-Channel 60 V (D-S) 175 °C MOSFET

Case Package:SOT-23

Datasheet:SQD50P06-15L_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	TO-252, (D-Pak)
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	136W Tc
Power Dissipation	136W
Turn On Delay Time	15 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	15.5mOhm @ 17A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5910pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	112 ns
Continuous Drain Current (ID)	-50A
Threshold Voltage	-1.5V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-60V
Max Junction Temperature (Tj)	175°C
Drain to Source Resistance	13.5mOhm
Height	2.507mm
RoHS Status	ROHS3 Compliant