IXTN17N120L

new-10%

Manufacturer part number:IXTN17N120L

Manufacturer:IXYS

Description:MOSFET N-CH 1200V 15A SOT-227B

Case Package:SOT-23

Datasheet:IXTN17N120L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Resistance	900MOhm
Terminal Finish	NICKEL
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	540W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	540W
Case Connection	ISOLATED
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	900m Ω @ 8.5A, 20V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	8300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	15A Tc
Gate Charge (Qg) (Max) @ Vgs	155nC @ 15V
Rise Time	31ns
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	20V
Vgs (Max)	±30V
Fall Time (Typ)	83 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	15A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	17A
Drain to Source Breakdown Voltage	1.2kV
Pulsed Drain Current-Max (IDM)	30A
Avalanche Energy Rating (Eas)	1500 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free