SQJ402EP-T1_GE3

new-10%

Manufacturer part number:SQJ402EP-T1_GE3

Manufacturer:Vishay Siliconix

Description:VISHAY SQJ402EP-T1-GE3 MOSFET Transistor, N Channel, 32 A, 100 V, 0.009 ohm, 10 V, 2 V

Case Package:SOT-23

Datasheet:SQJ402EP-T1_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	Automotive, AEC-Q101, TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
JESD-30 Code	R-PSSO-G4
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	83W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	11m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2289pF @ 40V
Current - Continuous Drain (Id) @ 25°C	32A Tc
Gate Charge (Qg) (Max) @ Vgs	51nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	32A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	75A
Height	1.07mm
Length	4.9mm
Width	4.37mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free