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SQJ858AEP-T1_GE3

SQJ858AEP-T1_GE3

SQJ858AEP-T1_GE3

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 6.3mOhm @ 14A, 10V ±20V 2450pF @ 20V 55nC @ 10V 40V PowerPAK® SO-8

SOT-23

SQJ858AEP-T1_GE3 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Supplier Device Package PowerPAK® SO-8
Weight 506.605978mg
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, TrenchFET®
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 48W Tc
Element Configuration Single
Power Dissipation 48W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.3mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2450pF @ 20V
Current - Continuous Drain (Id) @ 25°C 58A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Rise Time 9ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 8 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 58A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 40V
Input Capacitance 2.45nF
Drain to Source Resistance 6.3mOhm
Rds On Max 6.3 mΩ
REACH SVHC Unknown
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
SQJ858AEP-T1_GE3 Product Details

SQJ858AEP-T1_GE3 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2450pF @ 20V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 40V.As a result of its turn-off delay time, which is 26 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 6.3mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2V.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

SQJ858AEP-T1_GE3 Features


a continuous drain current (ID) of 58A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 26 ns
single MOSFETs transistor is 6.3mOhm
a threshold voltage of 2V
a 40V drain to source voltage (Vdss)


SQJ858AEP-T1_GE3 Applications


There are a lot of Vishay Siliconix
SQJ858AEP-T1_GE3 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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