SUD50P04-13L-E3

new-10%

Manufacturer part number:SUD50P04-13L-E3

Manufacturer:Vishay Siliconix

Description:MOSFET 40V 60A 93.7W

Case Package:SOT-23

Datasheet:SUD50P04-13L-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	13mOhm
Terminal Finish	Matte Tin (Sn)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	3W Ta 93.7W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	93.7mW
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	13m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3120pF @ 25V
Current - Continuous Drain (Id) @ 25°C	60A Tc
Gate Charge (Qg) (Max) @ Vgs	95nC @ 10V
Rise Time	10ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Turn-Off Delay Time	50 ns
Continuous Drain Current (ID)	60A
Threshold Voltage	-3V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	50A
Drain to Source Breakdown Voltage	40V
Avalanche Energy Rating (Eas)	80 mJ
Height	2.38mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free