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IRF3711Z

IRF3711Z

IRF3711Z

Infineon Technologies

IRF3711Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF3711Z Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2003
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 79W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 10V
Current - Continuous Drain (Id) @ 25°C 92A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
RoHS Status Non-RoHS Compliant
IRF3711Z Product Details

IRF3711Z Description


IRF3711Z is a 20v HEXFET? Power MOSFET. International Rectifier's logic level gate drive trench HEXFET? power MOSFETs feature benchmark on-state resistance (RDS(on)) and high package current ratings for high power DC motors, power tools, industrial batteries, and power supply applications. The Operating and Storage Temperature Range is between -55 and 175??. And the MOSFET IRF3711Z is in the TO-220AB package with 79W power dissipation.



IRF3711Z Features


  • Low RDS(on) at 4.5V VGS

  • Ultra-Low Gate Impedance

  • Fully Characterized Avalanche Voltage and Current

  • Gate-to-Source Voltage: ?à 20V

  • Operating Junction and Storage Temperature Range: -55 to+175??



IRF3711Z Applications


  • DC motor drive

  • High-efficiency synchronous rectification in SMPS

  • Uninterruptible power supply

  • High-speed power switching

  • Hard switched and high-frequency circuits


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