IRF3711Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRF3711Z Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2003
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
79W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.45V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2150pF @ 10V
Current - Continuous Drain (Id) @ 25°C
92A Tc
Gate Charge (Qg) (Max) @ Vgs
24nC @ 4.5V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
RoHS Status
Non-RoHS Compliant
IRF3711Z Product Details
IRF3711Z Description
IRF3711Z is a 20v HEXFET? Power MOSFET. International Rectifier's logic level gate drive trench HEXFET? power MOSFETs feature benchmark on-state resistance (RDS(on)) and high package current ratings for high power DC motors, power tools, industrial batteries, and power supply applications. The Operating and Storage Temperature Range is between -55 and 175??. And the MOSFET IRF3711Z is in the TO-220AB package with 79W power dissipation.
IRF3711Z Features
Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage and Current
Gate-to-Source Voltage: ?à 20V
Operating Junction and Storage Temperature Range: -55 to+175??