SUD50P10-43L-E3

new-10%

Manufacturer part number:SUD50P10-43L-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 100V 37.1A TO252

Case Package:SOT-23

Datasheet:SUD50P10-43L-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	43mOhm
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	8.3W Ta 136W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	8.3W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	43m Ω @ 9.2A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4600pF @ 50V
Current - Continuous Drain (Id) @ 25°C	37.1A Tc
Gate Charge (Qg) (Max) @ Vgs	160nC @ 10V
Rise Time	160ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	100 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	-9.2A
Threshold Voltage	-3V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-100V
Pulsed Drain Current-Max (IDM)	40A
Max Junction Temperature (Tj)	175°C
Height	2.507mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free