SUM110N04-2M3L-E3

new-10%

Manufacturer part number:SUM110N04-2M3L-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 40V 110A D2PAK

Case Package:SOT-23

Datasheet:SUM110N04-2M3L-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Supplier Device Package	TO-263 (D2Pak)
Operating Temperature	-55°C~175°C TJ
Packaging	Cut Tape (CT)
Published	2012
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	3.75W Ta 375W Tc
Element Configuration	Single
Power Dissipation	3.75W
Turn On Delay Time	25 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	13600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	110A Tc
Gate Charge (Qg) (Max) @ Vgs	360nC @ 10V
Rise Time	100ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	200 ns
Turn-Off Delay Time	125 ns
Reverse Recovery Time	56 ns
Continuous Drain Current (ID)	110A
Threshold Voltage	3V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Dual Supply Voltage	40V
Input Capacitance	13.6nF
Drain to Source Resistance	2.3mOhm
Rds On Max	2.3 mΩ
Nominal Vgs	3 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free